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2 edition of investigation into silicon dioxide films produced by r.f. sputtering in an argon atmosphere found in the catalog.

investigation into silicon dioxide films produced by r.f. sputtering in an argon atmosphere

R B. Carpenter

investigation into silicon dioxide films produced by r.f. sputtering in an argon atmosphere

dissertation [presented for the] M.Sc. Degree in Applied Solid State Physics.

by R B. Carpenter

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Published by Brighton College of Technology in Brighton .
Written in English


Edition Notes

ContributionsBrighton College of Technology. Department of Applied Solid State Physics.
ID Numbers
Open LibraryOL13743540M

Addition of oxygen to the sputtering gas, argon, increases the crystallinity and changes the orientation of the tin dioxide grains: () XRD intensity increases relative to the () and () diffraction peaks and this effect is observed both on Mo-coated SLG and () silicon wafers. The following document was written in as a chapter on Diffusion in Silicon for inclu-sion in a highly technical - text book on Silicon Integrated Circuit Process Technology. For marketing reasons we abandoned the book without completing it but this was one of several chapters that are complete. @article{osti_, title = {Investigation of the interfaces of silicon-silicon dioxide thin films and ball-milled tin-germanium (silicon) powders using x-ray techniques}, author = {Jayanetti, J K.D.S.}, abstractNote = {The Si/So{sub 2} thin film interface and Sn/Ge(Si) interfaces in ballmilled Sn-Ge(Si) powders are investigated using x-ray reflectivity and EXAFS, respectively.


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investigation into silicon dioxide films produced by r.f. sputtering in an argon atmosphere by R B. Carpenter Download PDF EPUB FB2

The sputtering rate for silicon dioxide by argon ion bombardment at energies appropriate for ion beam deposition (sputtering rate at these low energies is easily predicted by assuming the yield is limited by the metallic component of the binary target.

Silicon dioxide films by RF sputtering for 2 target in argon atmosphere in the pressure range 5–20 mTorr and RF power from to W. The effect of deposition parameters (RF The sputtering was done in the argon ambient in the ‘sputter-up’ configuration.

The sputtering pressure ranges from 5 toCited by:   In the present work, we report low temperature (sputter deposition of silicon dioxide films for microelectronic and MEMS applications.

The films were prepared by RF diode sputtering using a 3 inch diameter SiO 2 target in argon atmosphere in the pressure range 5–20 mTorr and RF power from to W. The effect of deposition. In the present work, we report low temperature (sputter deposition of silicon dioxide films for microelectronic and MEMS applications.

The films were prepared by RF diode sputtering using a 3 inch diameter SiO 2 target in argon atmosphere in the pressure range 5–20 mTorr and RF power from to W.

Thin films of silicon nitride (Si 3 N 4) and silicon carbide (SiC) have been deposited by radio frequency (r.f.) magnetron sputtering of stoichiometric targets in non-reactive argon and in the case of Si 3 N 4 additionally in reactive nitrogen–argon atmospheres.

The influence of the sputtering atmosphere, the substrate temperature and the substrate bias on the composition and on the Cited by: Silicon nitride films (from to Aå in thickness) have been deposited on silicon and silicon dioxide by reactive sputtering of a silicon cathode in a N2 glow discharge.

Both d‐c and rf. The composition of SiO x films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target.

sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×–2× mbar) and of the ion beam current on the target (– mA). The argon partial pressure during operation of the ion gun was 1× mbar. The substrate temperature was held at °C and the films.

An investigation of the local atomic structure via compositional analysis, chemical stability and heat treatment of r.f. sputtered silicon dioxide films and r.f.

sputtered vanadium-doped silicon dioxide films has been undertaken using a combination of IR spectroscopy, Rutherford backscattering, Auger electron spectroscopy, X-ray photoelectron spectroscopy, electron microprobe. The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry.

Films with thicknesses of – nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target.

REACTIVE PLASMA SPUTTER DEPOSITION OF SILICON OXIDE K.K. VOSSOUGH and C.E. HUNT Department of Electrical and Computer Engineering, University of California, Davis, CA ABSTRACT Silicon dioxide films were reactively sputter deposited in argon/oxygen ambient using RF magnetron sputter deposition techniques.

The electrical properties of SiO2 films produced by r.f. sputtering in an argon atmosphere were studied in the range from 30 Hz to 50 kHz as a function of the sputtering voltage (– V) and.

silicon films and light emitting silicon nanocrystals embedded into silicon dioxide matrix by the sputter deposition technique. 1ll. the film got by co-sputtering in argon and hydrogen atmosphere defined future investigation in theoretical and applied physics of semiconductors.

Some. Micro-fabrication Recipe: Sputtering of dielectric material Jiandong Fang and Rob MacDonald, Tai Chen, Sarah McQuaide, Rev. A, 5 Note: when sputtering silicon nitride, add Argon and Nitrogen in the proportions shown with throttle valve at 0%, then open the throttle valve until there is mTorr total pressure in chamber.

Donald M. Mattox, in The Foundations of Vacuum Coating Technology (Second Edition), PECVD With Ion Bombardment of Deposit. LP-PECVD below about 20 mTorr is used when ion bombardment of the depositing material is desired either to enhance the chemical reactions on the surface or to control the properties of the resulting deposit [–].

In L. Holland used ion bombardment during. Effect of RF Sputtering Process Parameters on Silicon Nitride Thin Film Deposition Sachin S Bharadwaj a, Shivaraj B Wa*, GR Rajkumara, M Krishna, aDepartment of Mechanical Engineering, R V College of Engineering, Bangalore,India Abstract The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin.

In this paper, we report the sputtering of SiO 2 as a viable low temperature process for MEMS applications. Very homogenous films were prepared on Si substrate using RF diode sputtering of SiO 2 target in argon atmosphere.

The effect of target to substrate spacing, sputtering pressure, RF power, and substrate cooling were investigated. The grain sizes of polycrystalline silicon (pc-Si) films is –50 μm. Against all these films, amorphous Si (a-Si) films have grain sizes of –2 nm.

Starting from an amorphous silicon film as a precursor and subjecting it to varying thermal treatments, it is possible to convert the a-Si film into nc, μc and pc films. Silicon oxide (SiO 2) films were deposited by RF planar magnetron sputtering in 30% oxygen–70% argon mixture from an SiO 2 target at a substrate temperature of °C onto substrates of glass and silicon with poly-Si films.

The deposition conditions of sputter-power, gas pressure and gas flow rate are kW, Pa and sccm. The sputtering rate for silicon dioxide by argon ion bombardment at energies appropriate for ion beam deposition (sputtering rate at these low energies is easily predicted by assuming the yield is limited by the metallic component of the binary target.

This assumption is shown to predict also the sputtering. Silicon dioxide films are sputter deposited on polycrystalline silicon (polysilicon) in an oxygen‐argon atmosphere at °C. Electrical conduction and breakdown are measured at various gate. Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma [email protected] focus in this article is on the surface roughness produced by films in argon plasma followed the typical sputtering yield curve, with a maximum around 60°–70° off-normal angle.

Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target in oxygen atmosphere, with a high‐power pulsed ArF (λ= nm) excimer laser. Silicon dioxide, also known as silica (from the Latin silex), is an oxide of silicon with the chemical formula SiO2, most commonly found in nature as quartz and in various living organisms.

In many parts of the world, silica is the major constituent of sand. ITO films preparation and methods of characterization. ITO films were prepared by radio frequency sputtering in reactive atmosphere, using 3 inch non - oxidized target with In:Sn in a weight proportion of The base pressure in the system was approximately Torr.

The partial pressure of the oxygen was set to Sputtering yields of Si were determined for bombardment with Ne, Ar, Kr, and Xe ions at normal incidence in the energy range –20 keV under ultrahigh vacuum conditions.

Silicon Dioxide Sputtering Target Description. Silicon dioxide sputtering target from Stanford Advanced Materials contains Si and O. Silicon dioxide (SiO2), also known as Silica, is a natural compound made from two of the most abundant materials on the planet: silicon (Si) and oxygen (O2).Silica is most commonly considered to be in the form of quartz.

Silicon nitride Silicon nitride thin films were deposited at W RF power and 5 mtorr pressure in argon atmosphere by RF diode sputtering process. Deposition rate profile of the silicon nitride films deposited at above mentioned parameter on a two-inch wafer (keeping target to substrate spacing fixed at 45 mm) is shown in Fig   The composition and uniformity of silicon nitride thin films deposited by reactive sputtering in a mixture of argon and nitrogen eventually contaminated by oxygen traces were studied.

Both direct observation of nuclear reactions on nitrogen and oxygen and backscattering of 4 He + ions were used to analyze the deposits. The films appear uniform as a function of depth. In this investigation we used ion mill based trimming tool 3KW RF power supply and argon/oxygen sputtering gases.

High purity SiO 2 target was used on both sources. silicon dioxide films”,Electrochemical Society, Vol, pp, May, [5] S.

Mishin, “Improving Manufacturability of Bulk Acoustic Wave and. Silicon Dioxide [SiO2] Sputter Target used for Magnetron Sputtering Physical Vapour Deposition. Various diameters, thicknesses and purities available to suit all major sputter source manufacturers.

Available in pre-bonded assemblies with OFHC Cu backing plate and indium bonding. In the present work, the stress evaluation of RF sputtered silicon dioxide films for MEMS applications has been reported. The films were deposited in argon atmosphere in the pressure range mtorr at W RF power using a 3 inch diameter silicon dioxide target.

The stress measurements were carried out using wafer curvature technique. °C, the interfacial reaction between Ni and Ti film and silicon substrate occurs leading to the diffusion of Ni species into the silicon to form Ni2Si at the interface (Wu et al ).

The GIXRD pattern of Ni film annealed at °C for 30 min show the clear evidence of Ni2Si phase formation along with the presence Ni cubic-phase. Thus. Silicon Dioxide (Fused Quartz) (SiO 2) General Information. Silicon dioxide, also known as silica, has a chemical formula of SiO 2.

It has a melting point of 1,°C, a density of g/cc, and a vapor pressure of Torr at 1,°C. Silicon dioxide is commonly found in nature as sand or quartz.

nology as does silicon dioxide, and no one seems to have found a use for it until just recently. There have been a few reports during the past seven years on methods of depositing films of silicon nitride.

Until the reports of last year, all of these films of silicon nitride were used for dielectric purposes in thin -film. Sputtering is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes.

The process is repeatable and can be scaled up from small research and development projects, to production batches involving medium to large substrate areas.

quartz glass is very transparent well into the ultraviolet region of the spectrum. Indeed, the success of silicon solid-state electronics is due, in no small part, to the fact that high quality amorphous silicon dioxide thin films are easily produced by direct oxidation of silicon.

Coating methods include Physical Vapor Deposition (PVD) and one technique is called Sputtering. The sputtering method of thin film deposition involves introducing a controlled gas, usually chemically inert argon, into a vacuum chamber, and electrically energizing a cathode to establish a.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz Purity: %, Size: 4'', Thickness: '' Sputtering is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes. study explored the sputtering methods of thin-film multilayers to form dichroic mirrors in the visible spectrum for future solar-cell applications.

Silicon oxide and silicon nitride targets were selected as materials used in the sputtering process. The sputtered multilayers and films were then characterized and analyzed using spectrophotometry.

Silicon monoxide is especially suitable for depositing protective layers on first‐surface mirrors and for preparing replica and support films for electron microscope and electron diffraction studies.

Titanium dioxide films prepared by evaporating titanium and oxidizing it .Silicon dioxide of rf sputtering targets is one of the main method of preparation of SiO2 thin film. This kind of method of the preparation of SiO2 thin film at low temperature, with porous structure, low density, and poor ability to resist erosion; The preparation of thin films at high temperatures, high density and good performance.SHORT PROCESS DESCRIPTION: Physical vapor deposition (PVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing.

Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a "target," that is source, which then deposits onto a "substrate," such as a silicon wafer.